Apparatus for fabricating semiconductor device and method of fabricating semiconductor device using the same

ABSTRACT

An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from Korean Patent Application No.10-2020-0145050 filed on Nov. 3, 2020 in the Korean IntellectualProperty Office, and all the benefits accruing therefrom under 35 U.S.C.119, the contents of which in its entirety are herein incorporated byreference.

BACKGROUND 1. Technical Field

The present disclosure relates to an apparatus for processing asubstrate and a method for processing a substrate using the same.

2. Description of the Related Art

When a highly integrated semiconductor device such as an LSI (Largescale integration) is manufactured on a surface of a semiconductorwafer, it is desirable to form an ultra-fine pattern on the wafersurface.

Such an ultra-fine pattern may be formed by patterning a resist throughvarious processes such as exposing, developing, and cleaning a wafercoated with resist, and then etching the wafer to transfer the resistpattern onto the wafer.

A process of cleaning the wafer may be performed to remove dirt or anatural oxide film on the wafer surface after the etching. The cleaningprocess may be performed by immersing the wafer with a pattern formed onthe surface in a treatment liquid such as a chemical liquid or a rinsingliquid, or by supplying the treatment liquid to the wafer surface.

When the treatment liquid is dried after performing the cleaning processin accordance with the high integration of the semiconductor device, thepattern on the surface of the resist or the wafer may collapse.

Recently, a treatment method for drying a treatment liquid using a fluidin a supercritical state (hereinafter referred to as ‘supercriticalfluid’) that does not form an interface with a gas or liquid hasattracted attention.

SUMMARY

The present disclosure provides an apparatus and a method for processinga substrate which prevent contaminated fluid from being provided to asubstrate again, by causing the supercritical fluid to flow into thechamber through two paths, and separating a path through which thesupercritical fluid flows in, and a path through which the supercriticalfluid discharges, using a drain cup. As a result, the apparatus andmethod for processing the substrate may reduce the number of particlesremaining on the substrate after the drying process.

According to an embodiment of the present inventive concept, a method offabricating a semiconductor device includes providing a substrate to aninside of a chamber, the substrate being coated with a first fluid,providing a first supercritical fluid to the inside of the chamberthrough a lower inlet formed in a lower wall of the chamber, storing asecond fluid formed by a mixture of the first fluid and the firstsupercritical fluid inside a drain cup placed between the lower wall ofthe chamber and the substrate, providing a second supercritical fluid tothe inside of the chamber through an upper inlet formed in an upper wallof the chamber, and discharging the second fluid stored in the drain cupto the outside of the chamber through a fluid outlet formed in the lowerwall of the chamber. The drain cup includes a first portion of which awidth, in a horizontal direction, decreases toward the lower wall of thechamber, and a second portion which connects the first portion and thefluid outlet to each other. The chamber includes a first region and asecond region separated by the drain cup, the first region being formedbetween the drain cup and an inner wall of the chamber, and the secondregion being surrounded by the drain cup. The first supercritical fluidis provided to the first region, and the second supercritical fluid isprovided to the second region.

According to an embodiment of the present inventive concept, anapparatus for fabricating a semiconductor device includes a chamberaccommodating a substrate coated with a first fluid, a lower inlet whichis placed in a lower wall of the chamber and providing a firstsupercritical fluid into the chamber, an upper inlet placed in an upperwall of the chamber and providing a second supercritical fluid into thechamber, a fluid outlet placed in the lower wall of the chamber anddischarging a second fluid which is a mixture of the first fluid and thefirst supercritical fluid to outside of the chamber, and a drain cupplaced between the lower wall of the chamber and the substrate, andhaving a first portion of which a width, in a horizontal direction,decreases toward the lower wall of the chamber, and a second portionwhich connects the first portion and the fluid outlet to each other.

According to an embodiment of the present inventive concept, anapparatus for fabricating a semiconductor device includes a chamberaccommodating a substrate coated with a first fluid, and including afirst region and a second region, a drain cup which is placed between alower wall of the chamber and the substrate, includes a first portion ofwhich a width, in a horizontal direction, decreases toward the lowerwall of the chamber, and a second portion which connects the firstportion to the lower wall of the chamber, and separates the first regionand the second region, a lower inlet which is placed in the lower wallof the chamber and provides a first supercritical fluid into thechamber, and an upper inlet which is placed in the upper wall of thechamber, and provides a second supercritical fluid into the chamber. Thefirst region is a region between the drain cup and an inner wall of thechamber, and the second region is a region surrounded by the drain cup.

According to an embodiment of the present inventive concept, anapparatus for fabricating a semiconductor device includes a chamber, anupper support disposed in an inside of the chamber and supporting asubstrate coated with a first fluid, a funnel disposed in the inside ofthe chamber and having an upper end and a lower end, the funnel beinggradually narrowed from the upper end to the lower end, and the upperend being lower than a bottom end of the upper support, a first inletconnected to the chamber and providing a first supercritical fluid to anouter surface of the funnel, the outer surface of the funnel guiding thefirst supercritical fluid to the upper end of the funnel so that thefirst supercritical fluid flows to the substrate to form a mixture ofthe first fluid and the first supercritical fluid, a second inletconnected to the chamber and providing a second supercritical fluid toan upper surface of the substrate, and a fluid outlet connected to thelower end of the funnel to discharge, by the second supercritical fluid,a second fluid collected in the inside of the funnel to an outside ofthe chamber. The second fluid is the mixture of the first fluid and thefirst supercritical fluid which flows from the substrate to the insideof the funnel.

However, aspects of the present disclosure are not restricted to the oneset forth herein. The above and other aspects of the present disclosurewill become more apparent to one of ordinary skill in the art to whichthe present disclosure pertains by referencing the detailed descriptionof the present disclosure given below.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present disclosure willbecome more apparent by describing in detail exemplary embodimentsthereof referring to the attached drawings, in which:

FIG. 1 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 2 is a plan view for explaining the substrate processing apparatusshown in FIG. 1;

FIG. 3 is a flowchart for explaining a substrate processing methodaccording to some embodiments of the present disclosure;

FIGS. 4 to 8 are intermediate stage diagrams for explaining a substrateprocessing method according to some embodiments of the presentdisclosure;

FIG. 9 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 10 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 11 is a plan view for explaining the substrate processing apparatusshown in FIG. 10;

FIG. 12 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 13 is an enlarged view of a region A of FIG. 12;

FIG. 14 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 15 is a plan view for explaining the substrate processing apparatusshown in FIG. 14;

FIG. 16 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 17 is a plan view for explaining the substrate processing apparatusshown in FIG. 16;

FIG. 18 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure;

FIG. 19 is a plan view for explaining the substrate processing apparatusshown in FIG. 18;

FIG. 20 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure; and

FIG. 21 is a diagram for explaining the operation of the substrateprocessing apparatus shown in FIG. 20.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 1 and 2.

FIG. 1 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 2 is aplan view for explaining the substrate processing apparatus shown inFIG. 1.

The substrate processing apparatus according to some embodiments of thepresent disclosure may dry a substrate 10 for which a rinsing process iscompleted. After the rinsing process is completed, a first fluid F1 mayremain on a surface of the substrate 10. The first fluid F 1 may includea rinse liquid. The first fluid F1 may include, for example, isopropylalcohol (IPA). In some embodiments, the first fluid F1 may include oneof methyl ethyl ketone and tert-butanol.

The substrate processing apparatus may dry the substrate 10 by utilizinga supercritical fluid. The supercritical fluids (SF1 of FIG. 4 and SF2of FIG. 7) may include or may be formed of, for example, carbon dioxide(CO₂). However, the technical idea of the present disclosure is notlimited thereto. In some embodiments, the supercritical fluid (SF1 ofFIG. 4 and SF2 of FIG. 7) may include or may be formed of at least oneof CF₄, Xe, C₂F₆, N₂O, SF₆, Cl₂ and H₂O. In an embodiment, the rinsingprocess and the dry process may be performed in the same chamber. Thepresent inventive concept is not limited thereto. The dry process may beperformed in a chamber different from a chamber in which the rinsingprocess is performed.

Carbon dioxide (CO₂) of the supercritical state may have a supercriticalstate, for example, when the temperature is raised to 30° C. or higherand the pressure is maintained at 7.4 MPa or higher. Hereinafter, forthe sake of description, an example in which the supercritical fluid(SF1 of FIG. 4 and SF2 of FIG. 7) include carbon dioxide (CO₂) will beexplained.

Referring to FIGS. 1 and 2, the substrate processing apparatus accordingto some embodiments of the present disclosure includes a chamber 100, alower inlet 110, an upper inlet 120, a fluid outlet 130, a drain cup140, and an upper support 150. For example, the lower inlet 110 and theupper inlet 120 may be an inlet which is a hole in the wall, or mayadditionally include a structure formed in the hole that allows fluidsto pass therethrough, and the fluid outlet 130 may be an outlet which isa hole in the wall, or may additionally include a structure formed inthe hole that allows fluids to pass therethrough. A valve may beconnected to each of the lower inlet 110, the upper inlet 120, and thefluid outlet 130, and may operate to control the flow via respective oneof the lower inlet 110, the upper inlet 120, and the fluid outlet 130.For the simplicity of drawings, the valve is omitted from the drawings.

The chamber 100 may provide a space in which the drying process of thesubstrate 10 is performed. The chamber 100 may include substances whichwithstand the critical temperature and pressure of the supercriticalfluid (SF1 of FIG. 4 and SF2 of FIG. 7). The substrate 10 coated withthe first fluid F1 may be provided to the inside of the chamber 100.

The lower inlet 110 may be placed on a lower wall 101 of the chamber100. For example, the lower inlet 110 may be connected to the lower wall101. The lower inlet 110 may be placed below the drain cup 140. Thelower inlet 110 may penetrate, for example, the lower wall 101 of thechamber 100 to be connected to the space defined by the chamber 100. Thefirst supercritical fluid (SF1 of FIG. 4) may flow into the chamber 100through the lower inlet 110.

The upper inlet 120 may be placed on the upper wall 102 of the chamber100. For example, the upper inlet 120 may be connected to the upper wall102 of the chamber 100. The upper inlet 120 may be placed above thedrain cup 140. The upper inlet 120 may penetrate, for example, the upperwall 102 of the chamber 100 to be connected to the space defined by thechamber 100. The second supercritical fluid (SF2 of FIG. 7) may flowinto the chamber 100 through the upper inlet 120.

The fluid outlet 130 may be placed on the lower wall 101 of the chamber100. For example, the fluid outlet 130 may be connected to the lowerwall 101 of the chamber 100. The fluid outlet 130 may be placed belowthe drain cup 140. The fluid outlet 130 may be placed separately fromthe lower inlet 110. For example, the fluid outlet 130 may be spacedapart from the lower inlet 110.

The fluid outlet 130 may penetrate, for example, the lower wall 101 ofthe chamber 100. The second fluid (F2 of FIG. 7), which is a mixture ofthe first fluid F1 and the first supercritical fluid SF1, may bedischarged to the outside of the chamber 100 through the fluid outlet130.

The drain cup 140 may be placed between the substrate 10 and an innerwall of the chamber 100. The drain cup 140 may have a cup shape. Atleast a part of the drain cup 140 may include a portion of which awidth, in a first horizontal direction DR1, decreases toward the lowerwall 101 of the chamber 100. The upper part of the drain cup 140 mayhave an open shape. The lower part of the drain cup 140 may be connectedto the fluid outlet 130.

Although FIG. 2 shows that the drain cup 140 has a circular shape on aplane defined by a first horizontal direction DR1 and a secondhorizontal direction DR2 perpendicular to the first horizontal directionDR1, the technical idea of the present disclosure is not limitedthereto.

The drain cup 140 may separate the interior (i.e., the space) of thechamber 100 into a first region R1 and a second region R2. The firstregion R1 of the chamber 100 may include a region between the drain cup140 and the side wall of the chamber 100, and a region between the draincup 140 and the lower wall 101 of the chamber 100. The second region R2of the chamber 100 may include a region surrounded by the drain cup 140(i.e., the inside of the drain cup 140).

The substrate 10 may be placed in the second region R2 of the chamber100. The lower inlet 110 may be connected to the first region R1 of thechamber 100. The first supercritical fluid (SF1 of FIG. 4) may beprovided to the first region R1 of the chamber 100 through the lowerinlet 110. The upper inlet 120 may be connected to the top of the secondregion R2 of the chamber 100. The second supercritical fluid (SF2 ofFIG. 7) may be provided to the second region R2 of the chamber 100through the upper inlet 120.

The drain cup 140 may include a first portion 141 (i.e., a funnel), asecond portion 142, and a third portion 143 (i.e., a shield). The firstportion 141 of the drain cup 140 may be placed between the substrate 10and the lower wall 101 of the chamber 100. The first portion 141 of thedrain cup 140 may have an inclined profile from the lower wall 101 ofthe chamber 100. The first portion 141 of the drain cup 140 may have acup shape formed concavely toward the lower wall 101 of the chamber 100.For example, a width of the first portion 141 of the drain cup 140 inthe first horizontal direction DR1 may decrease toward the lower wall101 of the chamber 100. The width of the first portion 141 of the draincup 140 in the first horizontal direction DR1 may be greater than thewidth of the substrate 10 in the first horizontal direction DR1. Forexample, the first portion 141 (i.e., the funnel) of the drain cup 140may be gradually narrowed from an upper end of the first portion 141 toa lower end thereof to facilitate the collection of the second fluid (F2of FIG. 7), which is a mixture of the first fluid F1 and the firstsupercritical fluid SF1, and the discharge thereof to the outside of thechamber 100 through the fluid outlet 130.

The second portion 142 of the drain cup 140 may be placed between thefirst portion 141 of the drain cup 140 and the lower wall 101 of thechamber 100. The second portion 142 of the drain cup 140 may connect thefirst portion 141 of the drain cup 140 and the fluid outlet 130. Forexample, the second portion 142 may be connected to the lower end of thefirst portion 141.

A drain hole 142 h may be formed inside the second portion 142 of thedrain cup 140. The drain hole 142 h may be connected to the fluid outlet130. The drain hole 142 h may overlap the fluid outlet 130 in thevertical direction DR3. However, the technical idea of the presentdisclosure is not limited thereto.

A third portion 143 of the drain cup 140 may be connected to the firstportion 141 of the drain cup 140. The substrate 10 may be placed to besurrounded by the third portion 143 of the drain cup 140. However, thetechnical idea of the present disclosure is not limited thereto. In someembodiments, the substrate 10 may be disposed to be surrounded by thefirst portion 141 of the drain cup 140.

The third portion 143 of the drain cup 140 may extend from the firstportion 141 of the drain cup 140 toward the upper wall 102 of thechamber 100. Although FIG. 1 shows that the third portion 143 of thedrain cup 140 extends from the first portion 141 of the drain cup 140 ina vertical direction DR3, the technical idea of the present disclosureis not limited thereto.

The third portion 143 of the drain cup 140 may be spaced apart from theupper wall 102 of the chamber 100 in the vertical direction DR3. Throughthe spaced space between the third portion 143 of the drain cup 140 andthe upper wall 102 of the chamber 100, the first supercritical fluid(SF1 of FIG. 4) may be provided from the first region R1 of the chamber100 to the second region R2 of the chamber 100.

The upper support 150 may be connected to the upper wall 102 of thechamber 100. The upper support 150 may extend from the upper wall 102 ofthe chamber 100 to the second region R2 of the chamber 100. For example,a distal end of the upper support 150 may have a ring shape.

The upper support 150 may support the substrate 10. For example, theupper support 150 may be a ring-shaped upper support, and the substrate10 may be supported by the distal ends of the ring-shaped upper support.Although FIG. 2 shows that the upper support 150 has four uppersupports, this is for convenience of explanation, and the number of theupper supports is not limited thereto. The first portion 141 of thedrain cup 140 may include an upper end having a first width and a lowerend having a second with smaller than the first width. The first widthmay be greater than a distance between two opposite upper supports amongthe four supports of the upper support 150. The upper end of the firstportion 141 may be lower than a bottom end of the upper support 150(i.e., a bottom end of each of the four supports).

Although the configuration in which the lower inlet 110 for providingthe first supercritical fluid SF1 and the fluid outlet 130 fordischarging the second fluid F2 are disposed in the lower wall 101 ofthe chamber 100 (e.g., located at the lower wall 101), and the upperinlet 120 for providing the second supercritical fluid SF2 is placed onthe upper wall 102 of the chamber 100 (or is connected to the upper wall102) has been explained above, the technical idea of the presentdisclosure is not limited thereto.

In some embodiments, the lower inlet 110 that provides the firstsupercritical fluid SF1 and the fluid outlet 130 through which thesecond fluid F2 is discharged may be placed in a first sidewall of thechamber 100 (e.g., located at the first sidewall), and the upper inlet120 which provides the second supercritical fluid SF2 may be placed on asecond sidewall of the chamber 100 (or connected to the secondsidewall). In an embodiment, this first sidewall of the chamber 100 maybe opposite to this second sidewall of the chamber 100. The presentinventive concept is not limited thereto. Sidewalls described as a firstand second sidewall of the chamber 100 may be on the same side of thechamber 100.

In some embodiments, the lower inlet 110 which provides the firstsupercritical fluid SF1 and the fluid outlet 130 through which thesecond fluid F2 is discharged may be placed in a sidewall of the chamber100 (e.g., located at the sidewall), and the upper inlet 120 whichprovides the second supercritical fluid SF2 may be placed in the upperwall 102 of the chamber 100 (e.g., located at the upper wall 102).

In some embodiments, the lower inlet 110 which provides the firstsupercritical fluid SF1 and the fluid outlet 130 through which thesecond fluid F2 is discharged may be placed in the lower wall 101 of thechambers 100 (e.g., located at the lower wall 101), and the upper inlet120 which provides the second supercritical fluid SF2 may be placed in asidewall of the chamber 100 (e.g., located at the sidewall).

Hereinafter, a substrate processing method according to some embodimentsof the present disclosure will be described referring to FIGS. 3 to 8.

FIG. 3 is a flowchart for explaining the substrate processing methodaccording to some embodiments of the present disclosure. FIGS. 4 to 8are intermediate stage diagrams for explaining the substrate processingmethod according to some embodiments of the present disclosure.

Referring to FIGS. 3 and 4, the substrate 10 coated with the first fluidF1 may be provided to the inside of the chamber 100 (S110). The presentinvention is not limited thereto. For example, a substrate 10 may beprovided to the inside of the chamber 100, and a rinse process may beperformed on the substrate in the chamber so that the first fluid F1 mayremain on the substrate, and the steps S120 to S150 may be performed inthe same chamber where the rinsing process is performed.

The substrate 10 provided to the inside of the chamber 100 may besupported by the upper support 150. The first fluid F1 may include, forexample, isopropyl alcohol (IPA). In some embodiments, the first fluidF1 may include one of methyl ethyl ketone and tert-butanol.

Subsequently, the first supercritical fluid SF1 may be provided to theinside of the chamber 100 through the lower inlet 110. The firstsupercritical fluid SF1 may be provided to the first region R1 of thechamber 100. The first supercritical fluid SF1 provided to the firstregion R1 of the chamber 100 may flow into the second region R2 of thechamber 100 through a space between the drain cup 140 and the upper wall102 of the chamber 100. For example, an outer surface of the drain cup140 may guide the first supercritical fluid SF1 to the upper end of thedrain cup 140 which is adjacent to a blocking region defined by theupper wall 102 of the chamber 100 and a sidewall thereof. The sidewallmay connect the upper wall 102 to the lower wall 101. The guided firstsupercritical fluid SF1 may flow from the blocking region, which is inthe first region R1 of the chamber 100, into the second region R2 of thechamber 100. The first supercritical fluid SF1 may include or may beformed of, for example, carbon dioxide (CO₂). In some embodiments, thefirst supercritical fluid SF1 may include or may be formed of at leastone of CF₄, Xe, C₂F₆, N₂O, SF₆, Cl₂ and H₂O.

Referring to FIGS. 3 and 5, the first supercritical fluid SF1 flowinginto the second region R2 of the chamber 100 may be mixed with the firstfluid F1 coated onto the substrate 10 to form a second fluid F2 (S130).

As the first supercritical fluid SF1 is additionally mixed with thefirst fluid F1 coated on the substrate 10, the volume of the secondfluid F2 may gradually increase.

Referring to FIG. 6, the volume of the second fluid F2 may graduallyincreases and overflow from the side faces of the substrate 10. Thesecond fluid F2, which overflows from the side faces of the substrate10. The overflowed second fluid F2 may be stored the inside of the draincup 140. For example, the drain cup 140 may collect the overflowedsecond fluid F2.

Referring to FIGS. 3 and 7, the second supercritical fluid SF2 may beprovided to the inside of the chamber 100 through the upper inlet 120(S140). The second supercritical fluid SF2 may be provided to the secondregion R2 of the chamber 100. In an embodiment, the second supercriticalfluid SF2 is directly provided to the second region R2.

The first supercritical fluid SF1 may be continuously provided to theinside of the chamber 100 until the second supercritical fluid SF2 isprovided to the inside of the chamber 100. For example, the supply ofthe first supercritical fluid SF1 may be stopped before the secondsupercritical fluid SF2 is provided to the inside of the chamber 100.However, the technical idea of the present disclosure is not limitedthereto. In some embodiments, while the second supercritical fluid SF2is being provided to the inside of the chamber 100, the firstsupercritical fluid SF1 may also be provided to the inside of thechamber 100.

The second supercritical fluid SF2 may include or may be formed of, forexample, carbon dioxide (CO₂). In some embodiments, the secondsupercritical fluid SF2 may include or may be formed of at least one ofCF₄, Xe, C₂F₆, N₂O, SF₆, Cl₂ and H₂O. In an embodiment, the firstsupercritical fluid SF1 and the second supercritical fluid SF2 may beformed of the same substance as each other. The technical idea of thepresent disclosure is not limited thereto. In some embodiments, thesecond supercritical fluid SF2 may include or may be formed of asubstance different from the first supercritical fluid SF1.

Subsequently, the second fluid F2 stored in the drain cup 140 may bedischarged to the outside of the chamber 100 through the drain hole 142h and the fluid outlet 130, by utilizing the pressure of the secondsupercritical fluid SF2 provided to the second region R2 of the chamber100 (S150).

Referring to FIG. 8, by completely discharging the second fluid F2stored in the drain cup 140 to the outside of the chamber 100, thedrying process of the substrate 10 may be completed. The first fluid F1and the second fluid F2 do not exist on the substrate 10 after thedrying process is completed.

In the substrate processing apparatus and substrate processing methodaccording to some embodiments of the present disclosure, since thesupercritical fluids SF1 and SF2 are caused to flow into the chamber 100through two paths, and the path through which the supercritical fluidsSF1 and SF2 flow in, and the path through which the second fluid F2 isdischarged are separated, using the drain cup 140, the second fluid F2may be prevented from being provided to the substrate 10 again.Therefore, the substrate processing apparatus and the substrateprocessing method according to some embodiments of the presentdisclosure may reduce the number of particles remaining on the substrate10 after the drying process.

Hereinafter, the substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIG. 9. Differences from the substrate processing apparatus shown inFIGS. 1 and 2 will be mainly described.

FIG. 9 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure.

Referring to FIG. 9, the substrate processing apparatus according tosome embodiments of the present disclosure may include a drain cupsupport 260 which is placed between the lower wall 101 of the chamber100 and the drain cup 140 to support the drain cup 140. The drain cupsupport 260 may be placed in the first region R1 of the chamber 100.

The drain cup support 260 may connect the lower wall 101 of the chamber100 and the first portion 141 of the drain cup 140 to each other. Thedrain cup support 260 may include a plurality of columnar structuresextending from the lower wall 101 of the chamber 100 to the firstportion 141 of the drain cup 140. A plurality of columnar structures maybe placed to be spaced apart from each other.

Although the drain cup support 260 may include, for example, fourcolumnar structures spaced apart from each other, the technical idea ofthe present disclosure is not limited thereto. For example, the numberof columnar structures included in the drain cup support 260 is notlimited.

The substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the drain cup 140, byplacing the drain cup support 260 below the drain cup 140.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 10 and 11. Differences from the substrate processing apparatusshown in FIGS. 1 and 2 will be mainly described.

FIG. 10 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 11 is aplan view for explaining the substrate processing apparatus shown inFIG. 10.

Referring to FIGS. 10 and 11, the substrate processing apparatusaccording to some embodiments of the present disclosure may include aprotruding portion 305 that protrudes from the lower wall 101 of thechamber 100 toward the first portion 141 of the drain cup 140. Theprotruding portion 305 may be placed in the first region R1 of thechamber 100.

The protruding portion 305 may protrude from each of the lower wall 101and sidewalls of the chamber 100 toward the first portion 141 of thedrain cup 140. The protruding portion 305 may be in contact with thefirst portion 141 of the drain cup 140 to support the drain cup 140.

The protruding portion 305 may include, for example, first to fourthprotruding portions 305_1, 305_2, 305_3, and 305_4. For example, each ofthe first to fourth protruding portions 305_1, 305_2, 305_3, and 305_4may protrude from each of the four sidewalls of the chamber 100.

A first protruding portion 305_1 and a second protruding portion 305_2may be spaced apart from each other in the first horizontal directionDR1. A third protruding portion 305_3 and a fourth protruding portion305_4 may be spaced apart from each other in the second horizontaldirection DR2. The shapes and positions of the protruding portions 305shown in FIGS. 10 and 11 are examples, and the shape and number of theprotruding portions 305 are not limited.

A substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the drain cup 140 byplacing the protruding portion 305 below the drain cup 140.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 12 and 13. Differences from the substrate processing apparatusshown in FIGS. 10 and 11 will be mainly described.

FIG. 12 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 13 is anenlarged view of a region A of FIG. 12.

Referring to FIGS. 12 and 13, the substrate processing apparatusaccording to some embodiments of the present disclosure may include aprotruding portion 405 that protrudes from the lower wall 101 of thechamber 100 toward the first portion 441 of the drain cup 440. Theprotruding portion 405 may be placed in the first region R1 of thechamber 100.

The protruding portion 405 may protrude from each of the lower wall 101and sidewalls of the chamber 100 toward the first portion 441 of thedrain cup 440. The protruding portion 405 may be in contact with thefirst portion 441 of the drain cup 440. At least a part of theprotruding portion 405 may be inserted into the inside of a connectinggroove 441a formed on the lower face of the first portion 441 of thedrain cup 440 to support the drain cup 440.

The substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the drain cup 140, byplacing the protruding portion 405 below the drain cup 140.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 14 and 15. Differences from the substrate processing apparatusshown in FIGS. 1 and 2 will be mainly described.

FIG. 14 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 15 is aplan view for explaining the substrate processing apparatus shown inFIG. 14.

Referring to FIGS. 14 and 15, the substrate processing apparatusaccording to some embodiments of the present disclosure may includelower supports 570 which are placed between the substrate 10 and thedrain cup 140 to support the substrate 10. The lower supports 570 may beplaced in the second region R2 of the chamber 100.

The lower supports 570 may include a plurality of columnar structuresextending from the first portion 141 of the drain cup 140 toward thesubstrate 10. The substrate 10 may be placed on the lower supports 570.The lower supports 570 may be placed where the upper support 150 is notpresent.

Although FIG. 15 shows that eight lower supports 570 are placed apartfrom each other, this is for convenience of explanation, and the numberof lower supports 570 is not limited.

The substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the substrate 10, byplacing the lower supports 570 below the substrate 10.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 16 and 17. Differences from the substrate processing apparatusshown in FIGS. 14 and 15 will be mainly described.

FIG. 16 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 17 is aplan view for explaining the substrate processing apparatus shown inFIG. 16.

Referring to FIGS. 16 and 17, in the substrate processing apparatusaccording to some embodiments of the present disclosure, a lower support670 may include an extending portion 671 and a flat plate portion 672.The lower support 670 may be placed in the second region R2 of thechamber 100.

The extending portion 671 may include a plurality of columnar structuresextending from the first portion 141 of the drain cup 140 toward thesubstrate 10. Although FIG. 17 shows that eight extending portions 671are placed apart from each other, this is for convenience ofexplanation, and the number of extending portions 671 is not limited.

The flat plate portion 672 may be connected to the distal end of theextending portion 671. The flat plate portion 672 may be placed betweenthe distal end of the extending portion 671 and the substrate 10. Theflat plate portion 672 may include various structures having a flatplate shape.

FIG. 17 shows that one flat plate portion 672 placed below the centralportion of the substrate 10 and four flat plate portions 672 placedbelow the edge portion of the substrate 10 are placed. However, this isfor convenience of explanation, and the number of flat plate portions672 is not limited.

One flat plate portion 672 may be placed on at least one extendingportion 671. For example, the flat plate portion 672 disposed below thecentral portion of the substrate 10 may be placed on the four extendingportions 671. Further, the flat plate portion 672 placed below the edgeportion of the substrate 10 may be placed on one extending portion 671.However, this is an example, and the number of extending portions 671that overlap one flat plate portion 672 in the vertical direction DR3 isnot limited.

The substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the substrate 10, byplacing the lower support 670 including the extending portion 671 andthe flat plate portion 672 below the substrate 10.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 18 and 19. Differences from the substrate processing apparatusshown in FIGS. 14 and 15 will be mainly described.

FIG. 18 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 19 is aplan view for explaining the substrate processing apparatus shown inFIG. 18.

Referring to FIGS. 18 and 19, in the substrate processing apparatusaccording to some embodiments of the present disclosure, a lower support770 may include an extending portion 771 and a flat plate portion 772.The lower support 770 may be placed in the second region R2 of thechamber 100.

The extending portion 771 may include a plurality of columnar structuresextending from the first portion 141 of the drain cup 140 toward thesubstrate 10. Although FIG. 19 shows that eight extending portions 771are placed apart from each other, this is for convenience ofexplanation, and the number of extending portions 771 is not limited.

The flat plate portion 772 may be connected to the distal ends of theextending portions 771. The flat plate portion 772 may be placed betweenthe distal end of each of the extending portions 771 and the substrate10. The flat plate portion 772 may be formed integrally. The flat plateportion 772 may be in contact with the distal end of each of thecolumnar structures included in the extending portion 771.

The substrate processing apparatus according to some embodiments of thepresent disclosure may more securely support the substrate 10, byplacing the lower support 770 including the extending portion 771 andthe flat plate portion 772 below the substrate 10.

Hereinafter, a substrate processing apparatus according to someembodiments of the present disclosure will be described referring toFIGS. 20 and 21. Differences from the substrate processing apparatusshown in FIGS. 1 and 2 will be mainly described.

FIG. 20 is a diagram for explaining a substrate processing apparatusaccording to some embodiments of the present disclosure. FIG. 21 is adiagram for explaining the operation of the substrate processingapparatus shown in FIG. 20.

Referring to FIGS. 20 and 21, the substrate processing apparatusaccording to some embodiments of the present disclosure may include adrain cup support 860 and a drain cup drive 880.

At least a part of the second portion 142 of the drain cup 140 mayextend into the inside of the lower wall 101 of the chamber 100. Thedrain cup support 860 may be placed between the lower wall 101 and thedrain cup 140 to support the drain cup 140. The drain cup support 860may be placed in the first region R1 of the chamber 100.

The drain cup drive 880 may be placed on the lower wall 101 of thechamber 100. However, the technical idea of the present disclosure isnot limited thereto. In some embodiments, the drain cup drive 880 may beplaced outside the chamber 100.

The drain cup drive 880 may be connected to the lower part of the draincup support 860. The drain cup drive 880 may move the drain cup support860 in the vertical direction DR3. The drain cup drive 880 may move thedrain cup support 860 in the vertical direction DR3, thereby moving thedrain cup 140 supported by the drain cup support 860 in the verticaldirection DR3.

The drain cup drive 880 may include an actuator that moves the drain cupsupport 860 in the vertical direction DR3. Although the actuator may be,for example, a hydraulic cylinder, the technical idea of the presentdisclosure is not limited thereto.

As shown in FIG. 21, the drain cup drive 880 moves the drain cup 140 inthe vertical direction DR3 so that the upper part of the drain cup 140contacts the upper wall 102 of the chamber 100 to completely block thesecond region R2 of the chamber 100 from the first region R1 of thechamber 100. It will be understood that when an element is referred toas being “connected” or “coupled” to or “on” another element, it can bedirectly connected or coupled to or on the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element, oras “contacting” or “in contact with” another element, there are nointervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

Since the second region R2 of the chamber 100 is completely blocked fromthe first region R1 of the chamber 100 in the step (e.g., S140) as shownin FIG. 7 where the second supercritical fluid SF2 is provided to thesecond region R2 of the chamber 100 and the second fluid F2 isdischarged to the outside of the chamber 100, the second fluid F2 may beeffectively discharged.

Although the embodiments of the present disclosure have been describedabove referring to the attached drawings, the present disclosure is notlimited to the embodiments and may be produced in various differentforms. Those skilled in the art will appreciate that the invention maybe implemented in other specific forms without changing the technicalideas and essential features of the present disclosure. Therefore, thedisclosed embodiments of the invention are used in a generic anddescriptive sense only and not for purposes of limitation.

1. A method of fabricating a semiconductor device, the methodcomprising: providing a substrate to an inside of a chamber, wherein thesubstrate is coated with a first fluid; providing a first supercriticalfluid to the inside of the chamber through a lower inlet formed in alower wall of the chamber; storing a second fluid formed by a mixture ofthe first fluid and the first supercritical fluid inside a drain cupplaced between the lower wall of the chamber and the substrate;providing a second supercritical fluid to the inside of the chamberthrough an upper inlet formed in an upper wall of the chamber; anddischarging the second fluid stored in the drain cup to the outside ofthe chamber through a fluid outlet formed in the lower wall of thechamber, wherein the drain cup includes a first portion of which awidth, in a horizontal direction, decreases toward the lower wall of thechamber, and a second portion which connects the first portion and thefluid outlet to each other, wherein the chamber includes a first regionand a second region separated by the drain cup, the first region beingformed between the drain cup and an inner wall of the chamber, and thesecond region being surrounded by the drain cup, wherein the chamber andthe lower inlet are configured such that the first supercritical fluidis provided to the first region, and wherein the chamber and the upperinlet are configured such that the second supercritical fluid isprovided to the second region.
 2. The method of claim 1, wherein thefirst supercritical fluid is continuously provided to the inside of thechamber, until the second supercritical fluid is provided to the insideof the chamber.
 3. An apparatus for fabricating a semiconductor device,the apparatus comprising: a chamber configured to accommodate asubstrate coated with a first fluid; a lower inlet which is placed in alower wall of the chamber and configured to provide a firstsupercritical fluid into the chamber; an upper inlet placed in an upperwall of the chamber and configured to provide a second supercriticalfluid into the chamber; a fluid outlet placed in the lower wall of thechamber and configured to discharge a second fluid which is a mixture ofthe first fluid and the first supercritical fluid to outside of thechamber; and a drain cup placed between the lower wall of the chamberand the substrate, and having a first portion of which a width, in ahorizontal direction, decreases toward the lower wall of the chamber,and a second portion which connects the first portion and the fluidoutlet to each other.
 4. The apparatus of claim 3, wherein the drain cupfurther includes a third portion connected to the first portion andextending from the first portion of the drain cup toward the upper wallof the chamber.
 5. The apparatus of claim 3, further comprising: anupper support which is connected to the upper wall of the chamber and isconfigured to support the substrate.
 6. The apparatus of claim 3,further comprising: a drain cup support which connects the lower wall ofthe chamber and the first portion of the drain cup to each other andsupports the drain cup.
 7. The apparatus of claim 6, further comprising:a drain cup drive which is connected to a lower part of the drain cupsupport and is configured to move the drain cup in a vertical directionperpendicular to the horizontal direction.
 8. The apparatus of claim 3,wherein the chamber further includes a first protruding portion whichprotrudes from the lower wall of the chamber toward the first portion ofthe drain cup, and wherein the first protruding portion is in contactwith the first portion of the drain cup.
 9. The apparatus of claim 8,further comprising: a second protruding portion which is spaced apartfrom the first protruding portion in the horizontal direction.
 10. Theapparatus of claim 8, wherein the drain cup further includes aconnecting groove formed in the first portion of the drain cup, andwherein at least a part of the first protruding portion is inserted intothe connecting groove of the drain cup.
 11. The apparatus of claim 3,further comprising: a lower support which extends from the first portionof the drain cup toward the substrate and supports the substrate. 12.The apparatus of claim 11, wherein the lower support includes: anextending portion which is connected to the first portion of the draincup and extends toward the substrate, and a flat plate portion which isplaced between the extending portion of the lower support and thesubstrate and has a flat plate shape.
 13. An apparatus for fabricating asemiconductor device, the apparatus comprising: a chamber configured toaccommodate a substrate coated with a first fluid and including a firstregion and a second region; a drain cup which is placed between a lowerwall of the chamber and the substrate, the drain cup including: a firstportion of which a width, in a horizontal direction, decreases towardthe lower wall of the chamber, and a second portion which connects thefirst portion to the lower wall of the chamber, and separates the firstregion and the second region; a lower inlet which is placed in the lowerwall of the chamber and is configured to provide a first supercriticalfluid into the chamber; and an upper inlet which is placed in an upperwall of the chamber, and is configured to provide a second supercriticalfluid into the chamber, wherein the first region is a region between thedrain cup and an inner wall of the chamber, and the second region is aregion surrounded by the drain cup.
 14. The apparatus of claim 13,further comprising: a fluid outlet which is placed in the lower wall ofthe chamber, is connected to the second portion of the drain cup, anddischarges a second fluid which is a mixture of the first fluid and thefirst supercritical fluid to the outside of the chamber.
 15. Theapparatus of claim 13, wherein the drain cup and the lower inlet areconfigured such that the first supercritical fluid is provided to thefirst region, and wherein the drain cup and the upper inlet areconfigured such that the second supercritical fluid is provided to thesecond region.
 16. The apparatus of claim 13, wherein the substrate isplaced in the second region.
 17. The apparatus of claim 13, wherein thedrain cup further includes a third portion connected to the firstportion and extending from the first portion of the drain cup toward theupper wall of the chamber.
 18. The apparatus of claim 13, furthercomprising: a drain cup support which connects the lower wall of thechamber to the first portion of the drain cup and supports the draincup.
 19. The apparatus of claim 13, wherein the chamber further includesa protruding portion which protrudes from the lower wall of the chambertoward the first portion of the drain cup, and wherein the protrudingportion is in contact with the first portion of the drain cup.
 20. Theapparatus of claim 13, further comprising: a lower support which extendsfrom the first portion of the drain cup toward the substrate and isconfigured to support the substrate. 21.-23. (canceled)